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Synthesis and characteristics of KTa0.5Nb0.5O3 thin films

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Abstract

KTa0.5Nb0.5O3 thin films were synthesized via a metal-organic solution. Characteristics were measured, such as X-ray diffraction pattern, surface morphology and roughness, and electric properties. The synthesized films have a (100) preferential growth orientation on Si (100) substrate. The homogeneous microstructure and smooth surface benefit to the good electric properties of the thin films. The current density-voltage characteristic shows an unexpected feature of the transition from linear to nonlinear, which can be explained by the space-charge-limited mode. Dielectric constant and loss of the thin films decrease with the increase of frequency. The decrease of dielectric loss is related to the decrease of net polarization in material. The decrease of dielectric constant can be explained by Debye formula. The phase transition temperature T c is about 102 °C for KTa0.5Nb0.5O3 materials.

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Acknowledgments

This work is supported financially by the National Science Foundation of China (grant nos. 51102158 and 51202135), Jinan Science and Technology Fund of Young Star (grant no. 20120122), and Promotive Research Fund for Excellent Young and Middle-aged Scientists of Shandong Province (grant no. BS2010CL042).

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Authors and Affiliations

  1. New materials Research Institute, Shandong Academy of Sciences, Jinan, 250014, China

    Bing Liu, Xuping Wang, Yuanyuan Zhang, Xianshun Lv & Yuguo Yang

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  1. Bing Liu
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  2. Xuping Wang
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  3. Yuanyuan Zhang
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  4. Xianshun Lv
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  5. Yuguo Yang
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Correspondence to Xuping Wang.

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Liu, B., Wang, X., Zhang, Y. et al. Synthesis and characteristics of KTa0.5Nb0.5O3 thin films. Ionics 20, 1795–1799 (2014). https://doi.org/10.1007/s11581-014-1281-2

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  • DOI: https://doi.org/10.1007/s11581-014-1281-2

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